Product Details for Material from Infineon - IPP80N06S2L-H5 - Infineon IPP80N06S2L-H5 N-channel MOSFET Transistor, 3-pin TO-220

IPP80N06S2L-H5 Infineon Infineon IPP80N06S2L-H5 N-channel MOSFET Transistor, 3-pin TO-220

Part Nnumber
IPP80N06S2L-H5
Description
Infineon IPP80N06S2L-H5 N-channel MOSFET Transistor, 3-pin TO-220
Producer
Infineon
Basic price
1,81 EUR

The product with part number IPP80N06S2L-H5 (Infineon IPP80N06S2L-H5 N-channel MOSFET Transistor, 3-pin TO-220) is from company Infineon and distributed with basic unit price 1,81 EUR. Minimal order quantity is 1 pc.


CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.36 x 4.57 x 15.95mm Height15.95mm Length10.36mm Maximum Continuous Drain Current80 A Maximum Drain Source Resistance6.5 mΩ Maximum Drain Source Voltage55 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation300 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-220 Pin Count3 Typical Gate Charge @ Vgs145 nC@ 10 V Typical Input Capacitance @ Vds5000 pF@ 25 V Typical Turn-Off Delay Time75 ns Typical Turn-On Delay Time19 ns Width4.57mm Product Details Infineon OptiMOS™ Power MOSFET Family OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement modeAutomotive AEC Q101 qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen package (lead free)Ultra low Rds(on) MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs


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