BSC080N03LS G Infineon Infineon BSC080N03LS G N-channel MOSFET Transistor, 8-pin PG-TDSON-8
Part Nnumber
BSC080N03LS G
Description
Infineon BSC080N03LS G N-channel MOSFET Transistor, 8-pin PG-TDSON-8
The product with part number BSC080N03LS G (Infineon BSC080N03LS G N-channel MOSFET Transistor, 8-pin PG-TDSON-8)
is from company Infineon and distributed with basic unit price 0,28 EUR. Minimal order quantity is 1 pc.
CategoryPower MOSFET Channel ModeEnhancement Channel TypeN ConfigurationQuad Drain, Triple Source Dimensions6.35 x 5.35 x 1.1mm Height1.1mm Length6.35mm Maximum Continuous Drain Current53 A Maximum Drain Source Resistance12 mΩ Maximum Drain Source Voltage30 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation2.5 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypePG-TDSON-8 Pin Count8 Typical Gate Charge @ Vgs7.5 nC V @ 4.5 Typical Input Capacitance @ Vds1300 pF V @ 15 Typical Turn-Off Delay Time15 ns Typical Turn-On Delay Time3.3 ns Width5.35mm Product Details Infineon OptiMOS™3 Power MOSFETs, up to 40V OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs
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