FP15R06W1E3_B11 Infineon Infineon, FP15R06W1E3_B11, IGBT Module, N-channel, Hex, 22 A max, 600 V, 23-Pin EASY1B
Part Nnumber
FP15R06W1E3_B11
Description
Infineon, FP15R06W1E3_B11, IGBT Module, N-channel, Hex, 22 A max, 600 V, 23-Pin EASY1B
The product with part number FP15R06W1E3_B11 (Infineon, FP15R06W1E3_B11, IGBT Module, N-channel, Hex, 22 A max, 600 V, 23-Pin EASY1B)
is from company Infineon and distributed with basic unit price 33,84 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationHex Dimensions48 x 33.8 x 12mm Height12mm Length48mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current22 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation81 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeEASY1B Pin Count23 Switching Speed1MHz Width33.8mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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