FS200R07A1E3 Infineon Infineon, FS200R07A1E3, IGBT Module, N-channel, Hex, 250 A max, 650 V, 25-Pin HYBRID1
Description
Infineon, FS200R07A1E3, IGBT Module, N-channel, Hex, 250 A max, 650 V, 25-Pin HYBRID1
The product with part number FS200R07A1E3 (Infineon, FS200R07A1E3, IGBT Module, N-channel, Hex, 250 A max, 650 V, 25-Pin HYBRID1)
is from company Infineon and distributed with basic unit price 298,23 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationHex Dimensions140 x 72 x 17mm Height17mm Length140mm Maximum Collector Emitter Voltage650 V Maximum Continuous Collector Current250 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation790 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeHYBRID1 Pin Count25 Switching Speed1MHz Width72mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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