IGW50N60H3 Infineon Infineon IGW50N60H3 N-channel IGBT Transistor, 100 A 600 V, 3-Pin PG-TO-247-3
Description
Infineon IGW50N60H3 N-channel IGBT Transistor, 100 A 600 V, 3-Pin PG-TO-247-3
The product with part number IGW50N60H3 (Infineon IGW50N60H3 N-channel IGBT Transistor, 100 A 600 V, 3-Pin PG-TO-247-3)
is from company Infineon and distributed with basic unit price 5,77 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationSingle Dimensions16.13 x 5.21 x 21.1mm Height21.1mm Length16.13mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current100 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+175 °C Maximum Power Dissipation333 W Minimum Operating Temperature-40 °C Mounting TypeThrough Hole Package TypePG-TO-247-3 Pin Count3 Width5.21mm Product Details IGBT Discretes, Infineon IGBT Discretes The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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