IPB80N06S2-08 Infineon Infineon IPB80N06S2-08 N-channel MOSFET Transistor, 80 A, 55 V, 3-pin TO-263
Part Nnumber
IPB80N06S2-08
Description
Infineon IPB80N06S2-08 N-channel MOSFET Transistor, 80 A, 55 V, 3-pin TO-263
The product with part number IPB80N06S2-08 (Infineon IPB80N06S2-08 N-channel MOSFET Transistor, 80 A, 55 V, 3-pin TO-263)
is from company Infineon and distributed with basic unit price 0,89 EUR. Minimal order quantity is 1 pc.
CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10 x 9.25 x 4.4mm Height4.4mm Length10mm Maximum Continuous Drain Current80 A Maximum Drain Source Resistance6.6 mΩ Maximum Drain Source Voltage55 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation250 W Minimum Operating Temperature-55 °C Mounting TypeSurface Mount Number of Elements per Chip1 Package TypeTO-263 Pin Count3 Typical Gate Charge @ Vgs86 nC@ 10 V Typical Input Capacitance @ Vds3400 pF@ 25 V Typical Turn-Off Delay Time61 ns Typical Turn-On Delay Time16 ns Width9.25mm Product Details Infineon OptiMOS™ Power MOSFET Family OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement modeAutomotive AEC Q101 qualifiedMSL1 up to 260°C peak reflow175°C operating temperatureGreen package (lead free)Ultra low Rds(on) MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs
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