IPP034NE7N3GHKSA1 Infineon Infineon IPP034NE7N3GHKSA1 N-channel MOSFET Transistor, 100 A, 75 V, 3-Pin TO-220
Part Nnumber
IPP034NE7N3GHKSA1
Description
Infineon IPP034NE7N3GHKSA1 N-channel MOSFET Transistor, 100 A, 75 V, 3-Pin TO-220
The product with part number IPP034NE7N3GHKSA1 (Infineon IPP034NE7N3GHKSA1 N-channel MOSFET Transistor, 100 A, 75 V, 3-Pin TO-220)
is from company Infineon and distributed with basic unit price 1,53 EUR. Minimal order quantity is 1 pc.
CategoryPower Transistor Channel ModeEnhancement Channel TypeN ConfigurationSingle Dimensions10.36 x 4.57 x 15.95mm Height15.95mm Length10.36mm Maximum Continuous Drain Current100 A Maximum Drain Source Resistance3.4 mΩ Maximum Drain Source Voltage75 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+175 °C Maximum Power Dissipation214 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypeTO-220 Pin Count3 Typical Gate Charge @ Vgs88 nC@ 10 V Typical Input Capacitance @ Vds6110 pF@ 37.5 V Typical Turn-Off Delay Time40 ns Typical Turn-On Delay Time16 ns Width4.57mm Product Details Infineon OptiMOS™3 Power MOSFETs, 60V and over OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs
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