Product Details for Material from Infineon - IPW60R099CP - Infineon IPW60R099CP N-channel MOSFET Transistor, 3-pin PG-TO-247-3-1

IPW60R099CP Infineon Infineon IPW60R099CP N-channel MOSFET Transistor, 3-pin PG-TO-247-3-1

Part Nnumber
IPW60R099CP
Description
Infineon IPW60R099CP N-channel MOSFET Transistor, 3-pin PG-TO-247-3-1
Producer
Infineon
Basic price
6,78 EUR

The product with part number IPW60R099CP (Infineon IPW60R099CP N-channel MOSFET Transistor, 3-pin PG-TO-247-3-1) is from company Infineon and distributed with basic unit price 6,78 EUR. Minimal order quantity is 1 pc.


CategoryPower MOSFET Channel ModeEnhancement Channel TypeN Dimensions16.13 x 5.21 x 21.1mm Height21.1mm Length16.13mm Maximum Continuous Drain Current31 A Maximum Drain Source Resistance0.099 Ω Maximum Drain Source Voltage650 V Maximum Gate Source Voltage±20 V Maximum Operating Temperature+150 °C Maximum Power Dissipation255 W Minimum Operating Temperature-55 °C Mounting TypeThrough Hole Number of Elements per Chip1 Package TypePG-TO-247-3-1 Pin Count3 Typical Gate Charge @ Vgs14 nC V @ 10 Typical Input Capacitance @ Vds2800 pF V @ 100 Typical Turn-Off Delay Time60 ns Typical Turn-On Delay Time10 ns Width5.21mm Product Details Infineon CoolMOS™ Power MOSFET Family This Range of MOSFET Transistors by Infineon combines all benefits of fast switching Superjunction MOSFETs with the ease of use. Such as low area specific on-state resistance and reduced energy stored in output capacitance, the 500V CoolMOS™ CE series provides a high body diode ruggedness, achieves extremely low conduction and switching losses and can make switching applications more efficient, more compact, lighter and cooler. Reduced energy stored in output capacitance High body diode ruggedness (E oss)Reduced reverse recovery charge (Q rr)Reduced gate charge (Q g)Easy control of switching behaviour MOSFET Transistors, Infineon Infineon’s large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs


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