FF450R12ME4_B11 Infineon Infineon, FF450R12ME4_B11, IGBT Module, N-channel, Dual, 675 A max, 1200 V, 11-Pin ECONOD
Part Nnumber
FF450R12ME4_B11
Description
Infineon, FF450R12ME4_B11, IGBT Module, N-channel, Dual, 675 A max, 1200 V, 11-Pin ECONOD
The product with part number FF450R12ME4_B11 (Infineon, FF450R12ME4_B11, IGBT Module, N-channel, Dual, 675 A max, 1200 V, 11-Pin ECONOD)
is from company Infineon and distributed with basic unit price 276,04 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationDual Dimensions122.5 x 62.5 x 17mm Height17mm Length122.5mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current675 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation2250 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeECONOD Pin Count11 Switching Speed1MHz Width62.5mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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