FP50R06W2E3_B11 Infineon Infineon, FP50R06W2E3_B11, IGBT Module, N-channel, Hex, 65 A max, 600 V, 35-Pin EASY2B
Part Nnumber
FP50R06W2E3_B11
Description
Infineon, FP50R06W2E3_B11, IGBT Module, N-channel, Hex, 65 A max, 600 V, 35-Pin EASY2B
The product with part number FP50R06W2E3_B11 (Infineon, FP50R06W2E3_B11, IGBT Module, N-channel, Hex, 65 A max, 600 V, 35-Pin EASY2B)
is from company Infineon and distributed with basic unit price 57,86 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationHex Dimensions56.7 x 48 x 12mm Height12mm Length56.7mm Maximum Collector Emitter Voltage600 V Maximum Continuous Collector Current65 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation175 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeEASY2B Pin Count35 Switching Speed1MHz Width48mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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