F12-25R12KT4G Infineon Infineon, F12-25R12KT4G, IGBT Module, N-channel, 25 A max, 1200 V, 38-Pin ECONO3
Part Nnumber
F12-25R12KT4G
Description
Infineon, F12-25R12KT4G, IGBT Module, N-channel, 25 A max, 1200 V, 38-Pin ECONO3
The product with part number F12-25R12KT4G (Infineon, F12-25R12KT4G, IGBT Module, N-channel, 25 A max, 1200 V, 38-Pin ECONO3)
is from company Infineon and distributed with basic unit price 137,80 EUR. Minimal order quantity is 1 pc.
Channel TypeN ConfigurationArray Dimensions122 x 62 x 17mm Height17mm Length122mm Maximum Collector Emitter Voltage1200 V Maximum Continuous Collector Current25 A Maximum Gate Emitter Voltage±20V Maximum Operating Temperature+150 °C Maximum Power Dissipation160 W Minimum Operating Temperature-40 °C Mounting TypeScrew Mount Package TypeECONO3 Pin Count38 Switching Speed1MHz Width62mm Product Details IGBT Modules, Infineon IGBT Modules The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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